Effect of the Bandgap, Sun Concentration and Surface Recombination Velocity on the Performance of a III-V Bismide Multijunction Solar Cells
Abstract
In this paper, an emerging material GaAs1-xBix has been introduced in different layers of multijunction solar cells. By modifying the spectral p-n junction model, the theoretical efficiencies of two-, three- and four-junction III-V bismide multijunction solar cells have been estimated to be 36.5%, 44.0%, and 52.2% respectively for AM1.5G under 1 sun condition. The effects of the material bandgap, sun concentration, and surface recombination velocity on the solar cell have been studied extensively. Simulation results revealed that an increment up to ~10% on the overall cell efficiency can be achieved by concentrating the solar radiation from 1 sun to 500 sun; and a 3 – 4 % increment on the overall cell efficiency by tuning the bandgap of the bismide layer as well as modeling the surface recombination velocity involved. Simulation results could be utilized for better understanding the materials as well as in realization of highly efficient bismide based multijunction solar cells.
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G. M. A., H. Yoshihiro, D. E. D., L. D. H., H.-E. Jochen, and H.-B. A. W.Y., "Solar cell efficiency tables (version 52)," Progress in Photovoltaics: Research and Applications, vol. 26, pp. 427-436, 2018.
R. R. King, A. Boca, W. Hong, X. Liu, D. Bhusari, D. Larrabee, et al., "Band-gap-engineered architectures for high-efficiency multijunction concentrator solar cells," in 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2009, p. 55.
S. Wojtczuk, P. Chiu, X. Zhang, D. Derkacs, C. Harris, D. Pulver, et al., "InGaP/GaAs/InGaAs 41% concentrator cells using bi-facial epigrowth," in Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, 2010, pp. 001259-001264.
D. Beaton, R. Lewis, M. Masnadi-Shirazi, and T. Tiedje, "Temperature dependence of hole mobility in GaAs 1− x Bi x alloys," journal of applied physics, vol. 108, p. 083708, 2010.
D. Cooke, F. Hegmann, E. Young, and T. Tiedje, "Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy," Applied physics letters, vol. 89, p. 122103, 2006.
R. Kini, L. Bhusal, A. Ptak, R. France, and A. Mascarenhas, "Electron hall mobility in GaAsBi," journal of applied physics, vol. 106, p. 043705, 2009.
T. Thomas, A. Mellor, N. Hylton, M. Führer, D. Alonso-Ãlvarez, A. Braun, et al., "Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell," Semiconductor Science and Technology, vol. 30, p. 094010, 2015.
S. Khanom, M. K. Hossain, F. Ahmed, M. A. Hossain, A. Kowsar, and M. Rahaman, "Simulation study of multijunction solar cell incorporating GaAsBi," in Humanitarian Technology Conference (R10-HTC), 2017 IEEE Region 10, 2017, pp. 432-435.
A. Kowsar and S. F. U. Farhad, "High Efficiency Four Junction III-V Bismide Concentrator Solar Cell: Design, Theory, and Simulation," International Journal of Renewable Energy Research (IJRER), vol. 8, pp. 1762-1769, 2018.
S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, et al., "Molecular beam epitaxy growth of GaAs 1− x Bi x," Applied physics letters, vol. 82, pp. 2245-2247, 2003.
S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, and T. Tiedje, "Band gap of GaAs 1− x Bi x, 0< x< 3.6%," Applied physics letters, vol. 82, pp. 3874-3876, 2003.
J. Yoshida, T. Kita, O. Wada, and K. Oe, "Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy," Japanese journal of applied physics, vol. 42, p. 371, 2003.
A. Kowsar, K. R. Mehzabeen, M. S. Islam, and Z. Mahmood, "Determination of the theoretical efficiency of GaInP/GaAs/GaAs1-xBix multijunction solar cell," in Proc. of the 10th International conf. on fiber optics and Photonics Photonics, India, 2010.
D. Friedman, J. Geisz, A. Norman, M. Wanlass, and S. Kurtz, "0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs (1eV)/GaInAs (0.7 eV) four-junction solar cell," in 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 2006.
S. M. Sze and K. K. Ng, Physics of semiconductor devices: John wiley & sons, 2006.
M. E. Nell and A. M. Barnett, "The spectral pn junction model for tandem solar-cell design," IEEE Transactions on Electron Devices, vol. 34, pp. 257-266, 1987.
S. R. Kurtz, P. Faine, and J. Olson, "Modeling of twoâ€junction, seriesâ€connected tandem solar cells using topâ€cell thickness as an adjustable parameter," Journal of Applied Physics, vol. 68, pp. 1890-1895, 1990.
M. A. H. Abu Kowsar, Md Sofikul Islam, Afrina Sharmin and Z. H. Mahmood, "Analysis of theoretical efficiencies of GaInP2/GaAs/Ge multijunction solar cell," The Dhaka University Journal of Applied Science and Engineering, vol. 3, 2015.
A. Kowsar, A. Y. Imam, M. Rahaman, M. S. Bashar, M. S. Islam, S. Islam, et al., "Comparative study on the efficiencies of silicon solar cell." IOSR Journal of Applied Physics (IOSR-JAP), ISSN: 2278-4861.Volume 6, Issue 6 Ver. IV, PP 13-17, 2014.
S. N. Sakib, S. P. Mouri, Z. Ferdous, A. Kowsar, and M. S. Kaiser, "Effect of different solar radiation on the efficiency of GaInP2/GaAs/Ge based multijunction solar cell," in Electrical Information and Communication Technology (EICT), 2015 2nd International Conference on, 2015, pp. 528-532.
M. I. A Kowsar, KR Mehzabeen, ZH Mahmood, "Study on the Efficiency of the GaInP2/GaAs/Ge Multijunction Solar Cell," in Proc. of International Conference on Environmental Aspects of Bangladesh,BEN, Japan, 2010, pp. 116-119.
S. N. Sakib, S. P. Mouri, A. Kowsar, M. Rahaman, and M. S. Kaiser, "Theoretical efficiency of AlAs/GaAs/GaAs0. 91Bi0. 085 based new multijunction solar cell and effects of solar radiation and sun concentration on it," in Microelectronics, Computing and Communications (MicroCom), 2016 International Conference on, 2016, pp. 1-6.
D. R. Myers, K. Emery, and C. Gueymard, "Revising and validating spectral irradiance reference standards for photovoltaic performance evaluation," Journal of solar energy engineering, vol. 126, pp. 567-574, 2004.
A. Standard, "G173,“Standard Tables for Reference Solar Spectral Irradiances: Direct Normal and Hemispherical on 37 Tilted Surface,†Amer," Society for Testing Matls., West Conshocken PA, USA, 2007.
S. Kurtz, D. Myers, W. McMahon, J. Geisz, and M. Steiner, "A comparison of theoretical efficiencies of multiâ€junction concentrator solar cells," Progress in Photovoltaics: research and applications, vol. 16, pp. 537-546, 2008.
P. WÃ, Physics of Solar cells: from Principles to new Concepts: John Wiley & Sons, 2008.
S.-W. Feng, C.-M. Lai, C.-H. Chen, W.-C. Sun, and L.-W. Tu, "Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells," Journal of applied physics, vol. 108, p. 093118, 2010.
S. Kurtz and J. Geisz, "Multijunction solar cells for conversion of concentrated sunlight to electricity," Optics express, vol. 18, pp. A73-A78, 2010.
R. King, D. Law, C. Fetzer, R. Sherif, K. Edmondson, S. Kurtz, et al., "Pathways to 40%-efficient concentrator photovoltaics," in Proc. 20th European Photovoltaic Solar Energy Conference, 2005, pp. 10-11.
S. Kurtz, J. Olson, and A. Kibbler, "Electroreflectance and photoreflectance of GaInP," Solar Cells, vol. 24, pp. 307-312, 1988.
A. Marti and G. L. Araújo, "Limiting efficiencies for photovoltaic energy conversion in multigap systems," Solar Energy Materials and Solar Cells, vol. 43, pp. 203-222, 1996.
M. A. Green, Third generation photovoltaics: Springer, 2006.
M.-J. Yang, M. Yamaguchi, T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, "Photoluminescence analysis of InGaP top cells for high-efficiency multi-junction solar cells," Solar Energy Materials and Solar Cells, vol. 45, pp. 331-339, 1997.
DOI (PDF): https://doi.org/10.20508/ijrer.v8i4.8579.g7526
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