Analytical study of the minority carrier distribution and photocurrent of a Schottky-barrier silicon solar cell

Avigyan Chatterjee, Ashim Kumar Biswas, Amitabha Sinha

Abstract


ABSTRACT:

Schottky-barrier solar cells have been studied previously by various research workers. In this paper, the excess minority carrier distribution and the photocurrent of Schottky-barrier solar cell have been studied analytically and their dependence of doping concentration and back surface recombination velocity has been reported. An attempt has been made to give an interpretation of the results obtained from theoretical considerations.


Keywords


Schottky-barrier, solar cells, spectral response

Full Text:

PDF

References


REFERENCES:

D.M. Chapin, C.S. Fuller, G.L. Pearson,“A new silicon p-n junction photocell for converting solar radiation into electrical powerâ€, J. Appl. Phys.vol. 25, pp. 676-677, May 1954.

B. Dale, P. Smith, “Spectral response of solar cellsâ€, J. Appl. Phys. vol. 32, pp.1377-1381, July 1961.

J.G. Fossum, E.L. Burgess, “High efficiency p+ - n – n+ back surface-field silicon solar cells†,Appl. Phys. Lett. , vol. 33(3), pp.238-240, August 1978.

A.W. Blakers, M.A. Green, “20% efficiency silicon solar cellsâ€, Appl. Phys. Lett. 48, pp. 215-217, Jan 1986.

V. Perraki, “Modeling of recombination velocity and doping influence in epitaxial silicon solar cellsâ€, Solar Energy Materials & Solar Cells, vol.94, pp.1597-1603, June 2010.

D.L. Pulfrey and R.F. McOuat, “Schottky barrier solar cell calculationsâ€, Appl. Phys. Lett.vol. 24, pp. 167-169, Feb 1974.

R.F.McOuat and D.L. Pulfrey, “ A model for Schottky-barrier solar cell analysisâ€, J. Appl. Phys.vol. 47, pp. 2113-2119, May 1976.

L.C. Munoz and C. Ferrarons, “Drift field Schottky-barrier solar cell calculationsâ€, Appl. Phys. Lett. vol. 30, pp. 172-174, Feb 1977.

P.K. Dubey and V.V. Paranjape, “Open circuit voltage of a Schottky-barrier solar cellâ€, J. Appl. Phys. vol. 48, pp. 324-328, Jan 1977.

S.M. Vemon and W.A. Anderson, “Temperature effects in Schottky-barrier silicon solar cellsâ€, Appl. Phys. Lett. vol.26, pp. 707-709, June 1975.

B. Bhaumik and R. Sharan, “Temperature effects in Schottky-barrier solar cellâ€, Appl. Phys. Lett. vol.29, pp. 257-259, August 1976.

E.H. Rhoderick, “Metal semiconductor contactsâ€, IEE Proc. vol.129, pp. 1-14, Feb 1982.

K.T. Butler and J.H. Harding, “Atomistic simulation of doping effects on growth andcharge transport in Si/Ag interfaces in high-performance solar cellsâ€, Physical Review B. vol. 86, 245319-1 to 7, Dec 2012.

E.W. McFarland & J. Tang, “A photovoltaic device structure based on internal electron emissionâ€, Letters to Nature, vol. pp. 421 ,616-618 , Feb 2003.

H.J. Hovel, Semiconductors and Semimetals, vol. 11. Solar Cells,Academic Press, New York, 1975, pp. 112-115.

S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, John Wiley & Sons, 2007,pp.137.

J. Singh, Semiconductor Devices, McGraw Hill, New York, 1993, pp. 254-268.

E. Fred Schubert, Light Emitting Diodes, 2nd edition; Cambridge University Press, 2003, pp.115, 307.

J.G. Fossum, “Computer aided numerical analysis of silicon solar cells, Solid St. Electronicsâ€. vol. 19, pp.269-277, April 1976.

D.M. Caughey and R.E. Thomas, “Carrier mobilities in silicon empirically related to doping and fieldâ€, Proc. IEEE.vol. 55, pp. 2192-2193, Dec 1967.




DOI (PDF): https://doi.org/10.20508/ijrer.v4i2.1297.g6305

Refbacks

  • There are currently no refbacks.


Online ISSN: 1309-0127

Publisher: Gazi University

IJRER is cited in SCOPUS, EBSCO, WEB of SCIENCE (Clarivate Analytics);

IJRER has been cited in Emerging Sources Citation Index from 2016 in web of science.

WEB of SCIENCE in 2025; 

h=35,

Average citation per item=6.59

Last three Years Impact Factor=(1947+1753+1586)/(146+201+78)=5286/425=12.43

Category Quartile:Q4